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Transistor MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB

Product Code: IRFBE30PBF
Brand
Price when using LEMONA+ card:
and get a discount from
0.08
(-3%)
2.42

Price range

AmountPrice with tax (pcs)
1
2.50
2+
2.25
wholesale

Min. qty: 1

Unit: pcs

Total:

2.50

home deliveryHome delivery 1-4 b.d.

Shipping parcelDelivery to DPD Pickup locations 1-4 b.d.


Delivery terms

lemona shop

Order processing

Order processing

Orders are processed and shipped on weekdays from 8:00 a.m. to 5:00 p.m. We will notify you via SMS and email when your order is being delivered.

Quantity in shop

Not availableNot available
Lemona Estonia warehouse
Available4 pcs
Lemona Vilnius warehouse 1
Available3 pcs
Lemona Vilnius warehouse 2
Available2 pcs
Lemona Kaunas warehouse
Available3 pcs
Lemona Klaipėda warehouse
Available2 pcs
Lemona Šiauliai warehouse
Available>20 pcs
Lemona central warehouse
home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.

Over €50.00

(Orders up to 1000 kgs)

For free

To €50.00

(Orders up to 1000 kgs)

€5.00

Shipping parcel

Delivery to DPD pickup locations

Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.

3,50

Product description

MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB

Specifications

SKU
117119
Weight
0.0002 kg.
Power, W
125
Brand
Housing
TO220AB
Current, A
4.1
Structure
MOS-N-Ch
Product code
IRFBE30PBF
Description generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligenceDescription generated by artificial intelligence

Product description generated by artificial intelligence

VISHAY Transistor MOS-N-Ch 800V 4.1A 125W 3.0R TO220AB

This MOSFET, part of the VISHAY product line, is an 800V N-Channel Metal Oxide Semiconductor Field Effect Transistor. It's designed for high-power applications requiring robust performance and reliability.

Key Features and Specifications

  • MOSFET Type: N-Channel
  • Voltage (VDSS): 800V
  • Current (ID): 4.1A
  • Power Dissipation: 125W
  • RDS(on): 3.0Ω
  • Package: TO220AB

Applications

This high-power transistor is suitable for a variety of applications, including:

  • Power supplies
  • Motor control
  • Industrial automation
  • High-voltage switching circuits

Why Choose This VISHAY MOSFET?

VISHAY is a trusted name in the electronics industry, known for its high-quality components. This particular MOSFET offers a compelling combination of high voltage rating, substantial current handling capability, and efficient on-resistance. Its robust design ensures reliable operation in demanding environments. The TO220AB package provides excellent thermal performance.

Technical Details

ParameterValue
Part NumberMOS-N-Ch 800V 4.1A 125W 3.0R TO220AB
ManufacturerVISHAY

For detailed specifications and datasheets, please refer to the manufacturer's documentation.


This description is generated using artificial intelligence (AI) and may differ from the actual product. Common AI errors may include:

  • Inaccurate product features: some technical specifications, colors, sizes or other parameters may be inaccurate or omitted.
  • Incorrect compatibility information: AI may provide incorrect information about the compatibility of products with other devices or systems.
  • Overly Optimistic Functions: in some cases functions may be provided whose product iš doesnt really have.
  • Name or Model Discrepancies: AI may misrepresent the product name or model.

If you notice inconsistencies or have questions about the description, please contact us before purchasing the product, please contact us by e-mail to you: [email protected].