Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W VISHAY
Product Code: SIA106DJ-T1-GE3
Brand
More similar products
Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | €5.00 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.
3,50
Product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W VISHAY
Specifications
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Supplier parameters
Product code
SIA106DJ-T1-GE3
Product ID
U-3116287
Case
PowerPAK® SC70
Drain current
12A
Drain-source voltage
60V
Gate charge
13.5nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
22.5mΩ
Polarisation
unipolar
Power dissipation
19W
Pulsed drain current
40A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SIA106DJ-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].