Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 15A VISHAY
Product Code: SIA918EDJ-T1-GE3
Brand
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Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | €5.00 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.
3,50
Product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 15A VISHAY
Specifications
Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 15A
Supplier parameters
Product code
SIA918EDJ-T1-GE3
Product ID
U-3116327
Case
PowerPAK® SC70
Drain current
4.5A
Drain-source voltage
30V
Gate charge
9.5nC
Gate-source voltage
±8V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
77mΩ
Polarisation
unipolar
Power dissipation
7.8W
Pulsed drain current
15A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Brand
VISHAY
Supplier's product code
SIA918EDJ-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].