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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A VISHAY

Product Code: SI9407BDY-T1-E3
The photo is for illustration only. Please refer to the description for exact product specifications.
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home delivery

Home delivery

Home delivery

After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.

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For free

To €50.00

(Orders up to 1000 kgs)

€5.00

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Delivery to DPD pickup locations

After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.

3,50

Product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A VISHAY

Useful information


Specifications

SKU
U-3807690
Brand
Product code
SI9407BDY-T1-E3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A

Useful information

Supplier parameters

Product code
SI9407BDY-T1-E3
Supplier's product code
SI9407BDY-T1-E3
Product ID
U-3807690
Case
SO8
Drain current
-2.6A
Drain-source voltage
-60V
Gate charge
22nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
3.2W
Pulsed drain current
-20A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].