Delivery terms
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | €5.00 |
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.
3,50
Product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A VISHAY
Useful information
Specifications
Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Useful information
Supplier parameters
Product code
SI9407BDY-T1-E3
Supplier's product code
SI9407BDY-T1-E3
Product ID
U-3807690
Case
SO8
Drain current
-2.6A
Drain-source voltage
-60V
Gate charge
22nC
Gate-source voltage
±20V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.12Ω
Polarisation
unipolar
Power dissipation
3.2W
Pulsed drain current
-20A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].