Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -0.5A; Idm: -1A VISHAY
Product Code: SIUD401ED-T1-GE3
Brand
More similar products
Delivery terms
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail. If you are ordering outside of Estonia please use www.lemona-electronics.eu to order.
Over €50.00 (Orders up to 1000 kgs) | For free |
To €50.00 (Orders up to 1000 kgs) | €5.00 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 50€.
3,50
Product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -0.5A; Idm: -1A VISHAY
Specifications
Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -0.5A; Idm: -1A
Supplier parameters
Product code
SIUD401ED-T1-GE3
Brand
VISHAY
Supplier's product code
SIUD401ED-T1-GE3
Product ID
U-3116535
Case
PowerPAK® 0806-3
Drain current
-0.5A
Drain-source voltage
-30V
Gate charge
2nC
Gate-source voltage
±12V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
3.5Ω
Polarisation
unipolar
Power dissipation
1.25W
Pulsed drain current
-1A
Technology
TrenchFET®
Type of transistor
P-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].