Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 YANGJIE TECHNOLOGY
Product Code: YJL03G10A-YAN
Brand
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Delivery terms
2024-05-23 Estimated delivery
Product will be ordered from supplier. If the supplier is unable to deliver by the specified date, we will inform you by e-mail
 Not available | Supplier Warehouse |
Home delivery
Home delivery
After handing over the goods to the courier, we will inform you by e-mail.
Over €25.00 (Orders up to 1000 kgs) | For free |
To €25.00 (Orders up to 1000 kgs) | €4.50 |
Delivery to DPD pickup locations
Delivery to DPD pickup locations
After handing over the goods to the courier, we will notify you by e-mail. Free delivery for orders over 25€.
€3.50
Product description
Brand
Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 YANGJIE TECHNOLOGY
Useful information
Specifications
Supplier product description
Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Useful information
Supplier parameters
NomNr
YJL03G10A-YAN
Brand
YANGJIE TECHNOLOGY
Case
SOT23
Drain current
3A
Drain-source voltage
100V
Gate charge
4.3nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
YANGJIE TECHNOLOGY
Mounting
SMD
On-state resistance
0.14Ω
Polarisation
unipolar
Power dissipation
1.2W
Pulsed drain current
121A
Type of transistor
N-MOSFET
Supplier's product code
YJL03G10A-YAN
Product ID
U-1928819
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].
