Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Tootekood: TSG65N068CE-RVG
Bränd
Rohkem sarnaseid tooteid
Kättetoimetamise tähtajad
Kulleriga koju
Kulleriga koju
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.Tellimused üle 50,00 € toimetatakse kohale tasuta.
Üle 50,00 € (Tellimused kuni 1000 kgs) | Tasuta |
50,00 €-le (Tellimused kuni 1000 kgs) | 5,00 € |
Kohaletoimetamine DPD pakiautomaatidele
Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.Tellimused üle 50,00 € toimetatakse kohale tasuta.
3,50
Kauba kirjeldus
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 TAIWAN SEMICONDUCTOR
Tehnilised andmed
Tarnija toote kirjeldus
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Tarnija toote parameetrid
Product code
TSG65N068CE-RVG
Case
PDFN88
Drain current
30A
Drain-source voltage
650V
Features of semiconductor devices
Kelvin terminal
Gate charge
6.7nC
Gate-source voltage
-10...7V
Kind of channel
enhancement
Kind of package
tape
Kind of transistor
HEMT
Manufacturer
TAIWAN SEMICONDUCTOR
Mounting
SMD
On-state resistance
68mΩ
Polarisation
unipolar
Pulsed drain current
60A
Technology
GaN
Type of transistor
N-JFET
Brand
TAIWAN SEMICONDUCTOR
Supplier's product code
TSG65N068CE-RVG
Product ID
U-4157842
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].