Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 STARPOWER SEMICONDUCTOR
Tootekood: GD25PJY120F2S
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Üle 50,00 € (Tellimused kuni 1000 kgs) | Tasuta |
50,00 €-le (Tellimused kuni 1000 kgs) | 5,00 € |
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Kohaletoimetamine DPD pakiautomaatidele
Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.Tellimused üle 50,00 € toimetatakse kohale tasuta.
3,50 €
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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 STARPOWER SEMICONDUCTOR
Tehnilised andmed
Laokood
U-4762529
NomNr
GD25PJY120F2S
Tarnija toote kirjeldus
Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Tarnija toote parameetrid
Product code
GD25PJY120F2S
Product ID
U-4762529
Case
F2.0
Collector current
25A
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Manufacturer
STARPOWER SEMICONDUCTOR
Max. off-state voltage
1.2kV
Mechanical mounting
screw
Pulsed collector current
50A
Semiconductor structure
diode/transistor
Technology
Advanced Trench FS IGBT
Type of semiconductor module
IGBT
Topology
three-phase diode bridge
Supplier's product code
GD25PJY120F2S
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