Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W MICROCHIP TECHNOLOGY
Tootekood: APTM120DA30CT1G
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Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.Tellimused üle 50,00 € toimetatakse kohale tasuta.
Üle 50,00 € (Tellimused kuni 1000 kgs) | Tasuta |
50,00 €-le (Tellimused kuni 1000 kgs) | 5,00 € |
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Pärast kauba kullerile üleandmist teavitame teid sellest e-posti teel.Tellimused üle 50,00 € toimetatakse kohale tasuta.
3,50 €
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Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W MICROCHIP TECHNOLOGY
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Tarnija toote kirjeldus
Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Tarnija toote parameetrid
Product code
APTM120DA30CT1G
Case
SP1
Drain current
23A
Drain-source voltage
1.2kV
Electrical mounting
Press-in PCB
Gate-source voltage
±30V
Manufacturer
MICROCHIP TECHNOLOGY
Mechanical mounting
screw
On-state resistance
0.36Ω
Power dissipation
657W
Pulsed drain current
195A
Semiconductor structure
SiC diode/transistor
Technology
SiC
Type of semiconductor module
MOSFET transistor
Topology
NTC thermistor
Brand
MICROCHIP
Supplier's product code
APTM120DA30CT1G
Product ID
U-5104003
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