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3,50
Kauba kirjeldus
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -50A; Idm: -200A VISHAY
Tehnilised andmed
Tarnija toote kirjeldus
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -50A; Idm: -200A
Tarnija toote parameetrid
Product code
SISS23DN-T1-GE3
Supplier's product code
SISS23DN-T1-GE3
Product ID
U-3822851
Case
PowerPAK® 1212-8
Drain current
-50A
Drain-source voltage
-20V
Gate charge
300nC
Gate-source voltage
±8V
Kind of channel
enhancement
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
4.5mΩ
Polarisation
unipolar
Power dissipation
36W
Pulsed drain current
-200A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: [email protected].